Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate
نویسندگان
چکیده
We extend the McPherson model for silicon-oxygen bond-breakage in a way to capture the impact of the O-Si-O angle fluctuations on the breakage rate. It is shown that the mean rate is more than 5 times higher and its standard deviation is comparable to the nominal rate corresponding to the fixed angle (typical for α-quartz). The mean rate has appeared to grow exponentially with the electric field supporting the thermo-chemical model for time-dependent-dielectric-breakdown.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 49 شماره
صفحات -
تاریخ انتشار 2009